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Electrical Characteristics
Table 3. Device Level Characteristics (continued)
(Vcc = 2.7V, T A = 25 ° C, measured in S-parameter test fixture, unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
Maximum Stable Gain and Maximum Available Gain
(Note1)
f= 350 MHz
34
36.4
—
f= 430 MHZ
f= 900 MHz
f= 1900 MHZ
MSG, MAG
33.2
26.5
15
35.6
28.9
17.6
—
—
—
dB
Minimum Noise Figure
f= 350 MHz
—
1.0
1.35
f= 430 MHZ
f= 900 MHz
f= 1900 MHz
NF min
—
—
—
0.95
0.95
1.5
1.30
1.30
1.85
dB
Output Third Order Intercept
f= 350 MHz
7.7
9.7
—
f= 430 MHZ
f= 900 MHz
f= 1900 MHz
OIP3
8.3
11.3
11.6
10.3
13.3
13.6
—
—
—
dBm
Reverse Isolation
f= 350 MHz
-49
-53
—
f= 430 MHZ
f= 900 MHz
f= 1900 MHz
S12
-48
-42
-40
-52
-46
-44
—
—
—
dB
Note: Maximum Available Gain and Maximum Stable Gain are defined by the K factor as follows:
if K>1, MAG=|S21/S12(K ± SqRt(K2-1)|
if K<1, MSG=|S21/S12|
Table 4 lists the electrical characteristics measured on evaluation boards tuned for typical application
frequencies. Further details on the application circuits are shown in Section 4, “Application Circuits ” and
details on the boards are shown in Section 5, “Printed Circuit Board and Bill of Materials .”
Table 4. Electrical Characteristics Measured in Frequency-Specific Tuned Circuits
(Vcc = 2.7V, T A = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
350 MHz (see Figure 16 )
Supply Current
RF Gain
Icc
G
—
26.6
4.7
27.7
5.6
—
mA
dB
MBC13917 Advance Information, Rev. 1.0
4
Freescale Semiconductor
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